A carbon nanotube field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To impr More
A carbon nanotube field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To improve the saturation range in the output characteristics, new structures are proposed, and the simulation results are compared. The proposed structures have supperior output characteristics.
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